Transphorm
An American semiconductor company known for gallium nitride power transistors and power-conversion technologies.
Last updated August 26, 2026
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Overview
Transphorm was an American semiconductor company specializing in gallium nitride (GaN) power devices for switched-mode power supplies and other power-conversion applications. The company emerged from research connected with the University of California, Santa Barbara, and was founded in Delaware in February 2007. Its headquarters were in Goleta, California, near UCSB, where co-founder and chief technology officer Umesh Mishra was a professor. The company focused on using GaN rather than conventional silicon in high-voltage power transistors. GaN devices can support high-frequency switching and efficient power conversion, making them relevant to compact chargers, adapters, data-center power systems, industrial equipment, telecommunications infrastructure, and other applications where efficiency, thermal performance, and size are important. Transphorm's business centered on developing and manufacturing normally-off and normally-on GaN power devices, related wafers, and packaged products for power-supply designers and equipment manufacturers. Transphorm attracted substantial private investment during its development phase. Google Ventures invested $20 million in 2011 to support power-conversion technology development, while Kleiner Perkins and other investors contributed additional capital. In 2013, the company formed a relationship with Fujitsu Semiconductor to pursue integration of GaN power devices into power-supply businesses; the arrangement included minority equity positions for Fujitsu and Fujitsu Semiconductor. In 2015, Transphorm received a further $70 million investment led by KKR. A significant early product milestone came in September 2012, when Transphorm introduced the TPH2006PS, described as the first JEDEC-qualified 600-volt high-electron-mobility transistor in the industry. This helped establish the company as a specialist in high-voltage GaN power components. Transphorm later expanded its manufacturing capabilities through the 2021 acquisition of the AFSW wafer-fabrication facility from GaNovation, giving it greater control over wafer production for high-voltage GaN devices. Transphorm also pursued partnerships intended to broaden the use of GaN in integrated power systems. In March 2023, it introduced a GaN system-in-package developed with Weltrend Semiconductor. In August of the same year, it announced technology developed with Yaskawa Electric involving a patented GaN power-transistor design with a reported short-circuit withstand time of five microseconds. These developments reflected the company's effort to move beyond discrete transistors toward more integrated and application-specific power solutions. In February 2020, Transphorm became publicly traded through a reverse merger with Peninsula Acquisition Corporation, a special-purpose acquisition company. The public-company period ended after Renesas Electronics agreed in January 2024 to acquire Transphorm for $339 million. Renesas announced completion of the purchase on June 20, 2024. Following the acquisition, Transphorm ceased to operate as an independent public company and became part of Renesas's power-semiconductor portfolio.
History
Transphorm was established in Delaware in February 2007 as a semiconductor venture focused on gallium nitride power technology. Its origins were closely connected to the University of California, Santa Barbara. The company was headquartered in Goleta, California, and its technical leadership included Umesh Mishra, a UCSB professor who served as co-founder and chief technology officer. The company's central objective was to commercialize GaN transistors for power conversion. Compared with traditional silicon devices, GaN power semiconductors can enable faster switching and improved efficiency in suitable applications. Transphorm therefore targeted switched-mode power supplies and related markets requiring compact, efficient, high-frequency power systems. Development was supported by venture and strategic investment. Google Ventures invested $20 million in 2011, with the stated purpose of helping Transphorm develop power-conversion technologies. Kleiner Perkins and other investors provided an additional $18 million. In September 2012, Transphorm launched the TPH2006PS, which was described as the first JEDEC-qualified 600 V HEMT in the industry. The milestone gave the company an important standards and product-validation reference in the high-voltage GaN market. In November 2013, Transphorm entered a cooperation with Fujitsu Semiconductor. The partners sought to integrate Transphorm's GaN power devices into power-supply businesses associated with Fujitsu. Fujitsu and Fujitsu Semiconductor took minority equity positions as part of the arrangement. In 2015, Transphorm received a $70 million investment led by KKR, supplying additional capital for its technology and manufacturing activities. Transphorm entered the public markets in February 2020 through a reverse merger with Peninsula Acquisition Corporation, a special-purpose acquisition company. Public-market access gave the company a different financing and reporting structure while it continued developing GaN products. In August 2021, it acquired full ownership of the AFSW wafer-fabrication facility from GaNovation, a high-voltage GaN manufacturer. The transaction strengthened Transphorm's control over wafer-fabrication capacity and supported its vertically integrated manufacturing ambitions. The company continued to expand its product architecture through collaborations. In March 2023, Transphorm and Weltrend Semiconductor introduced a GaN system-in-package, combining GaN power technology with a more integrated packaging approach. The product was scheduled for presentation at the 2023 Applied Power Electronics Conference. In August 2023, Transphorm and Yaskawa Electric announced a patented GaN power-transistor technology with a reported short-circuit withstand time of five microseconds, addressing a protection and robustness issue relevant to industrial power applications. Transphorm's independent corporate history ended in 2024. In January, Renesas Electronics agreed to acquire the company for $339 million. Renesas completed the purchase on June 20, 2024. As a result, Transphorm became part of Renesas and no longer operated as an independent public company. Its technology and product heritage continued within the acquiring company's broader power-semiconductor activities.
- 2024
Acquired by Renesas
[1]Renesas agreed to acquire Transphorm for $339 million and completed the transaction on June 20.
- 2023
GaN system-in-package announced
[1]Transphorm and Weltrend Semiconductor developed a GaN system-in-package product.
- 2023
Yaskawa short-circuit technology announced
[1]Transphorm and Yaskawa announced patented GaN transistor technology with a reported five-microsecond short-circuit withstand time.
- 2021
AFSW facility acquired
[1]Transphorm acquired 100% of the AFSW wafer-fabrication facility from GaNovation.
- 2020
Reverse merger and public listing
[1]Transphorm became publicly traded through a reverse merger with Peninsula Acquisition Corporation.
- 2015
KKR-led investment
[1]Transphorm received a $70 million investment led by KKR.
- 2013
Fujitsu Semiconductor collaboration
[1]Transphorm and Fujitsu Semiconductor agreed to collaborate on integrating GaN devices into power-supply businesses.
- 2012
600 V JEDEC-qualified HEMT introduced
[1]Transphorm released the TPH2006PS, described as the first JEDEC-qualified 600 V HEMT in the industry.
- 2011
Google Ventures investment
[1]Google Ventures invested $20 million to support development of Transphorm's power-conversion technologies.
- 2007
Company founded
[1]Transphorm was founded in Delaware in February as a GaN power-semiconductor company connected with UCSB research.
Products and positioning
High-performance gallium nitride power semiconductors for efficient, high-frequency power conversion.
600 V GaN HEMT · 2012
TPH2006PS
The TPH2006PS was a high-voltage gallium nitride high-electron-mobility transistor introduced in 2012. Transphorm described it as the first 600 V HEMT to receive JEDEC qualification in the industry. It represented an early effort to provide qualified GaN switching devices for power-supply and power-conversion designs.
Power semiconductor devices
GaN FET and HEMT product family
Transphorm's main product area consisted of gallium nitride power transistors, including high-voltage HEMT and FET technologies for switched-mode power supplies. These devices were intended to support efficient, high-frequency power conversion in applications where lower losses, smaller magnetic components, and reduced system size can be valuable.
Integrated power package · 2023
GaN System-in-Package
Developed with Weltrend Semiconductor and announced in 2023, the GaN system-in-package represented Transphorm's move toward more integrated power solutions. The product was intended to combine GaN power functionality in a package suitable for power-supply system designers and was presented in connection with the Applied Power Electronics Conference.
Brand decisions
2024
Sell the company to Renesas ElectronicsM&ABackground
Renesas sought to expand its power-semiconductor activities through the acquisition of a specialized GaN device company.
Action taken
Renesas agreed in January 2024 to acquire Transphorm for $339 million and completed the purchase on June 20, 2024.
Aftermath
Transphorm ceased to operate as an independent public company and became part of Renesas.
Acquisition value. $339 million announced transaction value (Agreement announced January 2024; completion announced June 20, 2024)
2021
Acquire the AFSW wafer-fabrication facilityM&ABackground
Control of wafer production was strategically relevant to Transphorm's high-voltage GaN semiconductor business.
Action taken
Transphorm acquired 100% of the AFSW facility from GaNovation in August 2021.
Aftermath
The transaction expanded Transphorm's ownership of manufacturing capacity for high-voltage GaN devices.
2020
Enter the public markets through a reverse mergerStrategyBackground
Transphorm sought public-market access while continuing to develop and commercialize GaN power semiconductors.
Action taken
The company completed a reverse merger with Peninsula Acquisition Corporation in February 2020.
Aftermath
Transphorm operated as a publicly traded company until its acquisition by Renesas in 2024.
Recent events
- Unconfirmed
Transphorm secures $12.9 million equity financing[2]
Transphorm secured $12.9 million in non-brokered equity financing through a private placement of common stock to MCM Investment Partners.
- Unconfirmed
Transphorm joint venture acquires wafer-fab operation in Japan[3]
GaNovation, Transphorm's joint venture with JCP Capital, acquired 100% interest in the AFSW wafer-fab facility in Japan; the acquisition reduced Transphorm's effective stake in AFSW to 25%, from 49%.
Marelli and Transphorm announce strategic partnership[4]
Marelli announced a strategic partnership with Transphorm to collaborate on technologies and product development for electric-vehicle power conversion solutions.
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