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SunRise Memory Corporation

SunRise Memory is a private semiconductor company developing 3D ferroelectric RAM for AI and high-performance computing, founded in 2016 by SanDisk co-founder Eli Harari.

Last updated September 29, 2026

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Overview

SunRise Memory Corporation is a private semiconductor company founded in June 2016 by Dr. Eli Harari, the founder and former CEO of SanDisk. The company is developing 3D ferroelectric RAM (FeRAM) intended to serve as a high-capacity, high-bandwidth, low-power memory solution for artificial intelligence, large language models, and high-performance computing. Its engineering team of more than 25 people is based in the United States and Israel, and the company states that it holds more than 180 registered patents with many more pending. The company's core thesis is that conventional DRAM will struggle to keep pace with the density and power requirements of memory-hungry AI workloads. SunRise Memory is designing its ferroelectric RAM to be manufacturable on existing high-volume memory fabs that have already mastered 3D process flows, such as 3D NAND fabs. Through 3D scaling, the company aims to improve memory bit density by 10X compared with DRAM, and through a system architecture that manages hundreds of independent memory banks on each chip in parallel, it expects to achieve dramatic improvements in data immediacy. Its ferroelectric low-voltage memory cells are also intended to significantly reduce energy consumption. SunRise Memory is led by Eli Harari as Chairman and CEO, with Richard Chernicoff serving as Chief Financial Officer. The company describes itself as being about halfway through its development journey and aims to disrupt the high end of the DRAM market, which it characterizes as a $100-billion market projected to grow. As a private company, it does not disclose detailed financial results or a stock ticker.

History

SunRise Memory Corporation was founded in June 2016 by Dr. Eli Harari, who had previously founded SanDisk Corporation in 1988 and served as its Chairman and CEO for twenty-two years until his retirement in 2010. Harari founded SunRise Memory after predicting that DRAM would face inevitable scaling hurdles as memory-hungry applications such as massive databases and large language models emerged. SanDisk was acquired in 2016 for approximately $18 billion. The company assembled a team drawn from industry-leading companies and academic labs, with cumulative experience of hundreds of years in semiconductor memory and hundreds of patents for fundamental new technologies. By 2024, SunRise Memory had a team of more than 25 engineers in the United States and Israel developing its first 3D ferroelectric RAM. The company designed its ferroelectric RAM from a clean sheet to be manufacturable on existing high-volume memory fabs that have previously mastered 3D process flows, such as 3D NAND fabs. Looking toward 2026 and beyond, SunRise Memory aims to improve memory bit density by 10X compared with DRAM through 3D scaling, and to achieve dramatic improvements in data immediacy through a system architecture that manages hundreds of independent memory banks on each chip in parallel. Its ferroelectric low-voltage memory cells are intended to significantly reduce energy consumption. The company states that its innovations have yielded more than 180 registered patents with many more pending, and that it is about halfway through its development journey. It aims to disrupt the high end of a $100-billion DRAM market projected to grow.

  • 2026

    Aims to improve memory bit density by 10X compared with DRAM through 3D scaling.

  • 2024

    Team of 25+ engineers in the USA and Israel developing first 3D ferroelectric RAM.

  • 2016

    SunRise Memory founded in June 2016 by Eli Harari.

Products and positioning

Developer of 3D ferroelectric RAM targeting the high end of the DRAM market with high capacity, high bandwidth, and low power for AI.

  • 3D ferroelectric RAM (FeRAM)

    High-capacity, high-bandwidth, low-power memory for AI and high-performance computing, designed for existing 3D NAND fabs.

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