Ferdinand-Braun-Institut

The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, commonly known as FBH, is a German applied research institute based at the Wissenschafts- und Wirtschaftsstandort Adlershof in Berlin. It is a member of the Gottfried Wilhelm Leibniz Scientific Community and conducts research intended to connect advanced semiconductor science with usable components, systems, pilot production and industrial applications. Its work is centered on III-V compound-semiconductor technologies, including gallium nitride, gallium arsenide and indium phosphide, together with photonics, microwave electronics, laser sources, ultraviolet devices and integrated quantum technology. The institute was re-established on 1 January 1992 following a recommendation by Germany's Wissenschaftsrat. Its institutional origins lie in the former Zentralinstitut für Optik und Spektroskopie and parts of the Zentralinstitut für Elektronenphysik of the Academy of Sciences of the German Democratic Republic. The institute takes its name from physicist Ferdinand Braun, whose work on wireless telegraphy contributed to his receipt of the 1909 Nobel Prize in Physics. FBH's research portfolio covers both device physics and the technologies needed to manufacture and qualify devices. In III-V electronics, it develops GaN microwave transistors and monolithic microwave integrated circuits, power amplifiers for wireless infrastructure, indium-phosphide heterojunction bipolar transistor circuits for millimetre-wave and terahertz applications, fast laser-diode drivers, microwave plasma sources and GaN power-electronics components. Its photonics work includes high-power diode lasers, high-brilliance and narrow-band laser sources, hybrid-integrated continuous-wave and pulsed laser modules, blue and ultraviolet nitride laser diodes, and short-wave ultraviolet LEDs. The institute's integrated quantum-technology activities include electro-optical components, hybrid micro-integrated modules, quantum sensors based on ultracold atoms and nanostructured diamond systems. Its III-V technology capabilities include metal-organic vapour-phase epitaxy, hydride vapour-phase epitaxy, in-situ process monitoring, bulk-crystal growth, wafer processing, laser micromachining, mounting, assembly, materials analysis and device measurement. FBH operates an industry-compatible clean-room and process infrastructure covering two- to four-inch wafers and materials such as GaAs, InP, SiC and GaN. Beyond fundamental and applied research, FBH offers prototyping, epitaxy, process development, pilot production, radio-frequency measurement consultancy, circuit simulation and related engineering services. It collaborates with universities, research organizations and industrial companies in Germany and abroad, including close academic links with Technische Universität Berlin and Humboldt University of Berlin. Since 2017, it has participated in Forschungsfabrik Mikroelektronik Deutschland, a national network for advanced microelectronics research and manufacturing. The institute has also supported the creation of technology companies based on its research. Examples include TESAG, later associated with Jenoptik; eagleyard Photonics, which develops high-power laser diodes; BeMiTec, focused on GaN transistors; BEAPLAS, Brilliance Fab Berlin and Phasor Instruments; UVphotonics; and BeamXpert. These activities reflect FBH's role as a bridge between public research, semiconductor process development and commercial technology transfer. In 2023, the institute was described as having approximately 370 employees, including around 200 scientists and 30 students.

FBH emerged from scientific institutions of the former East German Academy of Sciences. Its institutional predecessors included the Zentralinstitut für Optik und Spektroskopie and parts of the Zentralinstitut für Elektronenphysik. After German reunification, the Wissenschaftsrat recommended the institute's re-establishment, which took effect on 1 January 1992. The new institute was named for Ferdinand Braun, the German physicist recognized with the 1909 Nobel Prize in Physics for contributions to wireless telegraphy. Following its re-establishment, FBH developed as an applied research organization at Berlin-Adlershof, an important concentration of scientific, technical and commercial activity. Its remit evolved around III-V compound semiconductors and the conversion of laboratory results into components, manufacturing processes and systems suitable for external partners. The institute's activities expanded across microwave electronics, photonics, epitaxy, device fabrication, packaging, measurement and simulation. In III-V electronics, FBH built capabilities in gallium-nitride microwave and power devices, microwave integrated circuits, indium-phosphide heterojunction bipolar transistor technologies, terahertz electronics and compact plasma sources. In photonics, it developed high-power diode lasers, high-brilliance sources, hybrid laser modules, ultraviolet laser diodes and ultraviolet LEDs. Its technology infrastructure came to include clean-room processing, epitaxy through MOVPE and HVPE, wafer-level fabrication, laser micromachining, assembly, characterization and materials analysis. The institute also strengthened its role in quantum technology, including electro-optical and hybrid-integrated components, sensors using ultracold atoms and diamond-based systems. Alongside research projects, it provides partner organizations with prototyping, process development, pilot-series production, epitaxy, RF measurement support and simulation expertise. Its collaborations include universities, research organizations and companies in Germany and internationally, with particularly close links to Technische Universität Berlin and Humboldt University of Berlin. FBH has pursued technology transfer through spin-offs and commercial partnerships. Employee-led ventures established in different periods have addressed epitaxial materials, high-power laser diodes, GaN transistors, atmospheric-pressure plasma sources, sensor and display semiconductor technologies, microwave instrumentation, ultraviolet LEDs and optical-system simulation. TESAG was founded in 1999 and later became part of Jenoptik. Other documented ventures include eagleyard Photonics in 2002, BeMiTec in 2006, three ventures in 2013, UVphotonics in 2016 and BeamXpert in 2017. The institute joined Forschungsfabrik Mikroelektronik Deutschland in 2017, reinforcing its place in Germany's coordinated microelectronics research infrastructure. Günther Tränkle led the institute from 1996 through 2023. Patrick Scheele became scientific managing director in 2024, while Karin-Irene Eiermann has served as administrative managing director since 2022. The institute's reported 2023 workforce was approximately 370 people, including scientists and students, and its activities remain focused on applied research rather than consumer-brand manufacturing.

1. 2017BeamXpert founded and FMD membership begins

   BeamXpert was launched for optical-system simulation, and FBH joined Forschungsfabrik Mikroelektronik Deutschland.

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2. 2016UVphotonics spun off

   A venture focused on ultraviolet LED technology was established from FBH-related research.

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3. 2013Three additional spin-offs launched

   BEAPLAS, Brilliance Fab Berlin and Phasor Instruments were launched around plasma sources, semiconductor technologies and microwave measurement.

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4. 2006BeMiTec founded

   BeMiTec was created to develop and commercialize high-power gallium-nitride transistors for communications and other applications.

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5. 2002eagleyard Photonics established

   The spin-off began developing high-power laser diodes in cooperation with FBH for medical, scientific and industrial uses.

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6. 1999TESAG spin-off founded

   FBH employees established Three-Five Epitaxial Services AG to produce semiconductor layer systems; the company later became part of Jenoptik.

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7. 1992Institute re-established

   FBH was re-established on 1 January 1992 after a Wissenschaftsrat recommendation, drawing on predecessor institutes from the former Academy of Sciences of the GDR.

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A public, application-oriented semiconductor and photonics research institute that translates compound-semiconductor science into devices, processes, prototypes and industrially relevant systems.

• GaN microwave transistors and MMICsIII-V electronics

  Research and development outputs for high-frequency wireless infrastructure, including gallium-nitride transistors, power amplifiers and monolithic microwave integrated circuits.

• High-power diode lasersPhotonics

  Broad-area lasers, laser bars and high-brilliance or narrow-band diode sources for scientific, industrial, medical, sensing and metrology applications.

• Hybrid-integrated laser modulesPhotonics

  Continuous-wave and pulsed laser modules spanning near-infrared through ultraviolet wavelengths, including systems for biophotonics, laser sensing, metrology and quantum sensors.

• UV laser diodes and LEDsUltraviolet photonics

  Nitride-based blue and ultraviolet laser diodes and short-wave ultraviolet LEDs intended for sensing, disinfection, medical technology and production applications.

• Quantum-technology componentsIntegrated quantum technology

  Electro-optical components, hybrid micro-integrated modules, ultracold-atom quantum sensors and nanostructured diamond systems developed for emerging quantum applications.

• Semiconductor epitaxy and process servicesIII-V technology

  Epitaxial layer growth, process development, device prototyping, pilot production, assembly, measurement and consulting for GaAs-, GaN-, InP-, SiC- and related semiconductor technologies.

• 2024Scientific leadership transitionOther

  After Günther Tränkle's long tenure as director from 1996 to 2023, the institute required new scientific leadership.

  What changed. Patrick Scheele became scientific managing director, while Karin-Irene Eiermann continued as administrative managing director.

  Aftermath. FBH continued its applied research program under a newly constituted management arrangement.

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• 2017Participation in Forschungsfabrik Mikroelektronik DeutschlandStrategy

  Germany established a coordinated research and infrastructure framework to strengthen advanced microelectronics capabilities.

  What changed. FBH joined Forschungsfabrik Mikroelektronik Deutschland and contributed its semiconductor, photonics and process-development capabilities.

  Aftermath. The participation deepened FBH's role in Germany's national microelectronics research infrastructure.

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• 2024Patrick Scheele becomes scientific managing director

  Patrick Scheele succeeded long-serving director Günther Tränkle as FBH's scientific managing director.

  Leadership change
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• 2017FBH participates in Forschungsfabrik Mikroelektronik Deutschland

  The institute became part of Forschungsfabrik Mikroelektronik Deutschland, a German research and infrastructure network focused on advanced microelectronics.

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1. Ferdinand-Braun-Institut
2. Official Ferdinand-Braun-Institut website